MWI200-06A8T
IXYS
IXYS
IGBT MODULE 600V 225A 675W E3
$0.00
Available to order
Reference Price (USD)
5+
$158.21000
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MWI200-06A8T IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MWI200-06A8T offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MWI200-06A8T in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MWI200-06A8T IGBT module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 225 A
- Power - Max: 675 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
- Current - Collector Cutoff (Max): 1.8 mA
- Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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