N0400P-ZK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / MOSFET
$1.34
Available to order
Reference Price (USD)
1+
$1.34000
500+
$1.3266
1000+
$1.3132
1500+
$1.2998
2000+
$1.2864
2500+
$1.273
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The N0400P-ZK-E1-AY by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the N0400P-ZK-E1-AY is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 25W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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