UJ3C120150K3S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 18.4A TO247-3
$10.55
Available to order
Reference Price (USD)
1+
$10.55000
500+
$10.4445
1000+
$10.339
1500+
$10.2335
2000+
$10.128
2500+
$10.0225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the UJ3C120150K3S single MOSFET from UnitedSiC. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the UJ3C120150K3S combines cutting-edge technology with UnitedSiC's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 166.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Renesas Electronics America Inc
RJK03C0DPA-WS#J53
Renesas
NP34N055SLE-E1-AY
Analog Devices Inc./Maxim Integrated
MAX8585EUA
IXYS
IXFT88N30P-TRL
Renesas Electronics America Inc
RJK0351DPA-03#J0B
Diodes Incorporated
DMTH10H4M6SPS-13
Diodes Incorporated
DMT8008LFG-7
Harris Corporation
RF1S17N06LSM
onsemi
NVD260N65S3T4G
Diodes Incorporated