N0608N-ZK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / MOSFET
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the N0608N-ZK-E1-AY single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the N0608N-ZK-E1-AY combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 50.2W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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