NCP252160MNTWG
onsemi
onsemi
25V/60A INTEGRATED DRIVER AND MO
$2.84
Available to order
Reference Price (USD)
1+
$2.84000
500+
$2.8116
1000+
$2.7832
1500+
$2.7548
2000+
$2.7264
2500+
$2.698
Exquisite packaging
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onsemi presents the NCP252160MNTWG as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Single
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 0.7V, 2.65V
- Current - Peak Output (Source, Sink): 60A, 60A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 35 V
- Rise / Fall Time (Typ): 12ns, 6ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 31-PowerWFQFN
- Supplier Device Package: 31-PQFN (5x5)
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