NE3514S02-A
CEL
CEL
HJ-FET NCH 10DB S02
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NE3514S02-A by CEL is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the NE3514S02-A is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, CEL's NE3514S02-A delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 10dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.75dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
Related Products
Infineon Technologies
PTFA212001FV4XWSA1
NXP USA Inc.
MRF7S21110HSR5
Infineon Technologies
BG3123H6327XTSA1
NXP USA Inc.
BF904,215
Ampleon USA Inc.
BLC9G27LS-150AVZ
NXP USA Inc.
MRFG35005ANT1
Infineon Technologies
PTFA212401F V4 R250
NXP USA Inc.
MRF19085LR5
onsemi
2N5952
CEL