NE4210S01-T1B
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the NE4210S01-T1B RF MOSFET from Renesas Electronics America Inc (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The NE4210S01-T1B's advanced design ensures maximum power transfer with minimal distortion. With Renesas Electronics America Inc's expertise in semiconductor innovation, the NE4210S01-T1B provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13dB
- Voltage - Test: 2 V
- Current Rating (Amps): 15mA
- Noise Figure: 0.5dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD
- Supplier Device Package: SMD
Related Products
NXP USA Inc.
MRFE6S9200HSR5
onsemi
MCH6612-TL-E
Freescale Semiconductor
MRF6S19140HSR5
NXP USA Inc.
BLF8G10L-160V,112
Freescale Semiconductor
MRF6S27050HSR3
Infineon Technologies
PTFA092213ELV4T400XWSA1
Infineon Technologies
PTFA212001EV4R0XTMA1
NXP USA Inc.
MRF377HR5
Wolfspeed, Inc.
PXAC192908FV-V1
Freescale Semiconductor