NE5550779A-T1-A
Renesas Electronics America Inc

Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
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The NE5550779A-T1-A by Renesas Electronics America Inc is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The NE5550779A-T1-A's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust Renesas Electronics America Inc's NE5550779A-T1-A to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 900MHz
- Gain: 22dB
- Voltage - Test: 7.5 V
- Current Rating (Amps): 2.1A
- Noise Figure: -
- Current - Test: 140 mA
- Power - Output: 38.5dBm
- Voltage - Rated: 30 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A