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NE5550779A-T1-A

Renesas Electronics America Inc
NE5550779A-T1-A Preview
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
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Specifications

  • Product Status: Obsolete
  • Transistor Type: LDMOS
  • Frequency: 900MHz
  • Gain: 22dB
  • Voltage - Test: 7.5 V
  • Current Rating (Amps): 2.1A
  • Noise Figure: -
  • Current - Test: 140 mA
  • Power - Output: 38.5dBm
  • Voltage - Rated: 30 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A

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