NE66219-A
CEL
CEL
RF TRANS NPN 3.3V 21GHZ SOT523
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NE66219-A, a premium RF Bipolar Junction Transistor (BJT) by CEL, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The NE66219-A boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose CEL for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 14dB
- Power - Max: 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
Related Products
CEL
2SC5015-A
Microsemi Corporation
MRF5812G
CEL
NESG260234-T1-AZ
CEL
NE664M04-T2-A
Microsemi Corporation
MRF581
Panasonic Electronic Components
2SC4655JCL
CEL
NE68139-A
onsemi
PN918_D74Z
Infineon Technologies
BFP420E6433HTMA1
Central Semiconductor Corp