NESG260234-T1-AZ
CEL
CEL
TRANS NPN 460MHZ SOT-89
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The NESG260234-T1-AZ RF Bipolar Junction Transistor (BJT) by CEL is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NESG260234-T1-AZ is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose CEL for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9.2V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1.9W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
- Current - Collector (Ic) (Max): 600mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: 3-PowerMiniMold
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