NE851M33-A
CEL
CEL
RF TRANS NPN 5.5V 4.5GHZ 3SMINI
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Discover the NE851M33-A, a cutting-edge RF Bipolar Junction Transistor (BJT) from CEL, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NE851M33-A features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose CEL for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
- Gain: -
- Power - Max: 130mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SuperMiniMold (M33)
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