NESG2101M05-A
CEL
CEL
RF TRANS NPN 5V 17GHZ M05
$0.00
Available to order
Reference Price (USD)
1+
$1.71000
10+
$1.54000
100+
$1.23750
250+
$1.10000
500+
$0.96250
1,000+
$0.79750
2,500+
$0.74250
5,000+
$0.71500
Exquisite packaging
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Enhance your RF designs with the NESG2101M05-A, a high-efficiency Bipolar Junction Transistor (BJT) from CEL. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The NESG2101M05-A features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust CEL for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 17GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
- Gain: 11dB ~ 19dB
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M05
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