NE94433-T1B-A
CEL
CEL
TRANSISTOR NPN OSC FT=2GHZ SO
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Enhance your RF designs with the NE94433-T1B-A, a high-efficiency Bipolar Junction Transistor (BJT) from CEL. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The NE94433-T1B-A features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust CEL for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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