NGB8207ABNT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.62
Available to order
Reference Price (USD)
800+
$0.81625
1,600+
$0.73758
2,400+
$0.68840
5,600+
$0.65562
Exquisite packaging
Discount
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The NGB8207ABNT4G from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose NGB8207ABNT4G for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 365 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
- Power - Max: 165 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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