SIGC100T60R3EX1SA1
Infineon Technologies
Infineon Technologies
IGBT 3 CHIP 600V 200A WAFER
$10.34
Available to order
Reference Price (USD)
1+
$10.33759
500+
$10.2342141
1000+
$10.1308382
1500+
$10.0274623
2000+
$9.9240864
2500+
$9.8207105
Exquisite packaging
Discount
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The SIGC100T60R3EX1SA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The SIGC100T60R3EX1SA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate SIGC100T60R3EX1SA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 600 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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