NGTB20N120IHWG
onsemi
onsemi
IGBT 20A 1200V TO-247
$2.22
Available to order
Reference Price (USD)
1+
$2.22000
500+
$2.1978
1000+
$2.1756
1500+
$2.1534
2000+
$2.1312
2500+
$2.109
Exquisite packaging
Discount
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Discover the NGTB20N120IHWG Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the NGTB20N120IHWG ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the NGTB20N120IHWG for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
- Power - Max: 341 W
- Switching Energy: 480µJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: -/170ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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