NGTB30N135IHR1WG
onsemi
onsemi
IGBT 1350V 30A TO247
$0.00
Available to order
Reference Price (USD)
1+
$5.01000
30+
$4.25267
120+
$3.68550
510+
$3.13739
1,020+
$2.64600
Exquisite packaging
Discount
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The NGTB30N135IHR1WG by onsemi is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With onsemi's reputation for quality, the NGTB30N135IHR1WG is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
- Power - Max: 394 W
- Switching Energy: 630µA (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: -/200ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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