NGTB40N120FL2WAG
onsemi
onsemi
IGBT FIELD STOP 1200V 160A TO247
$0.00
Available to order
Reference Price (USD)
1+
$5.51000
30+
$4.67767
120+
$4.05408
510+
$3.45114
1,020+
$2.91060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the NGTB40N120FL2WAG Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the NGTB40N120FL2WAG provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose NGTB40N120FL2WAG for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 536 W
- Switching Energy: 1.7mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 313 nC
- Td (on/off) @ 25°C: 30ns/145ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 240 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
Related Products
onsemi
MGP11N60ED
Infineon Technologies
IRGP4050
Infineon Technologies
IRG6S320UTRLPBF
IXYS
IXYA20N65B3
IXYS
IXSK50N60AU1
Infineon Technologies
IRG4PC50FD-EPBF
Infineon Technologies
IGW50N60H3
Infineon Technologies
BSS88
Infineon Technologies
IKA03N120H2XKSA1
IXYS