NGTD13T65F2WP
onsemi
onsemi
IGBT TRENCH FIELD STOP 650V DIE
$1.22
Available to order
Reference Price (USD)
190+
$1.83795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGTD13T65F2WP Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the NGTD13T65F2WP provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Harris Corporation
HGTD3N60B3S9A
onsemi
NGTD20T120F2WP
IXYS
IXBH14N300HV
onsemi
NGTB25N120FL2WAG
onsemi
NGB8207ABNT4G
IXYS
IXBT42N170-TRL
onsemi
MGY40N60D
Renesas Electronics America Inc
RJP63F3DPP-Z0#T2
Renesas Electronics America Inc
RJH30H1DPP-M1#T2
Alpha & Omega Semiconductor Inc.