NGTD17T65F2SWK
onsemi
onsemi
IGBT TRENCH FIELD STOP 650V DIE
$2.06
Available to order
Reference Price (USD)
146+
$2.20158
Exquisite packaging
Discount
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Upgrade your power management systems with the NGTD17T65F2SWK Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the NGTD17T65F2SWK provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose NGTD17T65F2SWK for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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