NJW4832KH1-A-TE3
Nisshinbo Micro Devices Inc.
Nisshinbo Micro Devices Inc.
1-CHANNEL HIGH SIDE SWITCH
$0.68
Available to order
Reference Price (USD)
1+
$0.67980
500+
$0.673002
1000+
$0.666204
1500+
$0.659406
2000+
$0.652608
2500+
$0.64581
Exquisite packaging
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Optimize your power systems with Nisshinbo Micro Devices Inc.'s NJW4832KH1-A-TE3, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The NJW4832KH1-A-TE3 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: P-Channel MOSFET
- Voltage - Supply: 4.6V ~ 40V
- Logic Voltage - VIL, VIH: 0.9V, 2.64V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10µs, 10µs
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: 6-DFN (1.6x1.6)
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