NP36P04KDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 40V 36A TO263
$2.06
Available to order
Reference Price (USD)
1+
$2.06000
500+
$2.0394
1000+
$2.0188
1500+
$1.9982
2000+
$1.9776
2500+
$1.957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NP36P04KDG-E1-AY single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's NP36P04KDG-E1-AY for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Alpha & Omega Semiconductor Inc.
AO4459
Vishay Siliconix
SQ7414CENW-T1_GE3
IXYS
IXFA90N20X3-TRL
Fairchild Semiconductor
FQT4N20TF
onsemi
MTB9N25ET4
Panjit International Inc.
PJP3NA80_T0_00001
Vishay Siliconix
SQJ474EP-T1_BE3
IXYS
IXTP32P20T
Infineon Technologies
IRFHM8326TRPBF
Infineon Technologies