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NP60N04VLK-E1-AY

Renesas Electronics America Inc
NP60N04VLK-E1-AY Preview
Renesas Electronics America Inc
P-TRS2 AUTOMOTIVE MOS
$1.63
Available to order
Reference Price (USD)
1+
$1.63000
500+
$1.6137
1000+
$1.5974
1500+
$1.5811
2000+
$1.5648
2500+
$1.5485
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZP)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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