NP80N055MHE-S18-AY
Renesas
Renesas
NP80N055MHE-S18-AY - SWITCHINGN-
$2.07
Available to order
Reference Price (USD)
1+
$2.06958
500+
$2.0488842
1000+
$2.0281884
1500+
$2.0074926
2000+
$1.9867968
2500+
$1.966101
Exquisite packaging
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Discover the NP80N055MHE-S18-AY from Renesas, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NP80N055MHE-S18-AY ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: MP-25K
- Package / Case: TO-220-3
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