NP82N04NLG-S18-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 82A TO262
$2.16
Available to order
Reference Price (USD)
1+
$2.16000
500+
$2.1384
1000+
$2.1168
1500+
$2.0952
2000+
$2.0736
2500+
$2.052
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NP82N04NLG-S18-AY from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NP82N04NLG-S18-AY ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
NTD4809NA-1G
onsemi
NTHS4501NT1G
Infineon Technologies
IRF6662TRPBF
Diodes Incorporated
DMT10H072LFV-7
Infineon Technologies
IPP065N03LGXKSA1
STMicroelectronics
STI18N65M2
Vishay Siliconix
SI1013CX-T1-GE3
Rohm Semiconductor
RS3L045GNGZETB
IXYS
IXFH54N65X3
Goford Semiconductor