NSBC115EDXV6T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT563
$0.45
Available to order
Reference Price (USD)
4,000+
$0.10935
8,000+
$0.10305
12,000+
$0.09675
28,000+
$0.08940
Exquisite packaging
Discount
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The NSBC115EDXV6T1G by onsemi is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. onsemi's NSBC115EDXV6T1G is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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