NSBC144WPDP6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT963
$0.05
Available to order
Reference Price (USD)
8,000+
$0.05972
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with onsemi's NSBC144WPDP6T5G, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The NSBC144WPDP6T5G is widely used in lighting systems, portable electronics, and automotive accessories. onsemi's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the NSBC144WPDP6T5G is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
Related Products
Rohm Semiconductor
IMH5AT108
Nexperia USA Inc.
PEMH15,115
Rohm Semiconductor
UMG5NTR
Toshiba Semiconductor and Storage
RN4904,LF
onsemi
MUN5335DW1T1G
Toshiba Semiconductor and Storage
RN1905,LF(CT
Toshiba Semiconductor and Storage
RN2911,LF
Nexperia USA Inc.
PIMN32X
Toshiba Semiconductor and Storage
RN4982FE,LF(CT
Diodes Incorporated