NSBC144EPDXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.08
Available to order
Reference Price (USD)
8,000+
$0.07287
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the versatility of onsemi's NSBC144EPDXV6T1G, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The NSBC144EPDXV6T1G is widely used in IoT devices, medical equipment, and renewable energy systems. onsemi's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the NSBC144EPDXV6T1G offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN1903,LXHF(CT
Toshiba Semiconductor and Storage
RN4902,LF(CT
Toshiba Semiconductor and Storage
RN1904FE,LF(CT
Nexperia USA Inc.
PUMD16,115
Rohm Semiconductor
EMG11T2R
Toshiba Semiconductor and Storage
RN2963(TE85L,F)
onsemi
MUN5237DW1T1
NXP USA Inc.
PBLS4005V,115
Nexperia USA Inc.
NHUMD10F
onsemi