RN4982FE,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.1W ES6
$0.05
Available to order
Reference Price (USD)
4,000+
$0.04830
8,000+
$0.04200
12,000+
$0.03570
28,000+
$0.03360
100,000+
$0.02800
Exquisite packaging
Discount
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The RN4982FE,LF(CT from Toshiba Semiconductor and Storage represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. Toshiba Semiconductor and Storage's expertise in semiconductor manufacturing guarantees that the RN4982FE,LF(CT meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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