NST65011MW6T1G
onsemi
onsemi
TRANS 2NPN 65V 0.1A SC88
$0.39
Available to order
Reference Price (USD)
3,000+
$0.08760
6,000+
$0.07920
15,000+
$0.07080
30,000+
$0.06660
75,000+
$0.05960
Exquisite packaging
Discount
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Precision meets power in the NST65011MW6T1G BJT Array by onsemi. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The NST65011MW6T1G comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 380mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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