NSVBC858CLT1G
onsemi
onsemi
TRANS PNP 30V 0.1A SOT23-3
$0.36
Available to order
Reference Price (USD)
3,000+
$0.06877
6,000+
$0.06217
15,000+
$0.05558
30,000+
$0.05228
75,000+
$0.04679
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the NSVBC858CLT1G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NSVBC858CLT1G delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Infineon Technologies
BC858AE6327
NTE Electronics, Inc
NTE392
onsemi
NJD35N04T4G
Diodes Incorporated
BCP5316TA
NTE Electronics, Inc
2N4123
onsemi
DTC114Y
onsemi
2SA1507S
Nexperia USA Inc.
BCX52-16TF
Harris Corporation
HC5523IM
onsemi