NSVBCH807-40LT1G
onsemi
onsemi
TRANS PNP 45V 0.5A SOT23-3
$0.06
Available to order
Reference Price (USD)
1+
$0.05724
500+
$0.0566676
1000+
$0.0560952
1500+
$0.0555228
2000+
$0.0549504
2500+
$0.054378
Exquisite packaging
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Enhance your circuit designs with the NSVBCH807-40LT1G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NSVBCH807-40LT1G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 225 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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