NSVF5501SKT3G
onsemi
onsemi
RF-TR 10V 70MA FT=5.5GHZ
$0.46
Available to order
Reference Price (USD)
8,000+
$0.15400
16,000+
$0.14400
24,000+
$0.13700
56,000+
$0.13400
Exquisite packaging
Discount
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Upgrade your RF circuits with the NSVF5501SKT3G, a high-efficiency Bipolar Junction Transistor (BJT) from onsemi. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The NSVF5501SKT3G offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose onsemi for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
- Gain: 11dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-623F
- Supplier Device Package: SOT-623/SSFP
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