UPA800T-T1
CEL
CEL
RF TRANS 2 NPN 10V 8GHZ 6SO
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
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The UPA800T-T1 RF Bipolar Junction Transistor (BJT) by CEL is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the UPA800T-T1 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose CEL for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz
- Gain: -
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-SO
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