NSVMUN5116T1G-M02
onsemi
onsemi
NSVMUN5116 - DIGITAL BJT PNP - P
$0.04
Available to order
Reference Price (USD)
1+
$0.03640
500+
$0.036036
1000+
$0.035672
1500+
$0.035308
2000+
$0.034944
2500+
$0.03458
Exquisite packaging
Discount
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For designers seeking plug-and-play transistor solutions, NSVMUN5116T1G-M02 offers unmatched convenience. onsemi's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70 (SOT323)
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