NSVMUN5316DW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.47
Available to order
Reference Price (USD)
3,000+
$0.11761
6,000+
$0.11138
15,000+
$0.10202
30,000+
$0.09578
75,000+
$0.08851
Exquisite packaging
Discount
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Discover the versatility of onsemi's NSVMUN5316DW1T1G, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The NSVMUN5316DW1T1G is widely used in IoT devices, medical equipment, and renewable energy systems. onsemi's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the NSVMUN5316DW1T1G offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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