NSVMUN5333DW1T3G
onsemi
onsemi
TRANS PREBIAS NPN/PNP SOT363
$0.10
Available to order
Reference Price (USD)
1+
$0.10344
500+
$0.1024056
1000+
$0.1013712
1500+
$0.1003368
2000+
$0.0993024
2500+
$0.098268
Exquisite packaging
Discount
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The NSVMUN5333DW1T3G from onsemi represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. onsemi's expertise in semiconductor manufacturing guarantees that the NSVMUN5333DW1T3G meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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