NTBG020N120SC1
onsemi
onsemi
SICFET N-CH 1200V 8.6A/98A D2PAK
$50.26
Available to order
Reference Price (USD)
1+
$50.26000
500+
$49.7574
1000+
$49.2548
1500+
$48.7522
2000+
$48.2496
2500+
$47.747
Exquisite packaging
Discount
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Optimize your power electronics with the NTBG020N120SC1 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTBG020N120SC1 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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