NTBG045N065SC1
onsemi
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
$16.27
Available to order
Reference Price (USD)
1+
$16.27000
500+
$16.1073
1000+
$15.9446
1500+
$15.7819
2000+
$15.6192
2500+
$15.4565
Exquisite packaging
Discount
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Optimize your power electronics with the NTBG045N065SC1 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTBG045N065SC1 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 242W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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