NTBGS1D5N06C
onsemi

onsemi
POWER MOSFET, 60 V, 1.62 M?, 267
$6.41
Available to order
Reference Price (USD)
1+
$6.41000
500+
$6.3459
1000+
$6.2818
1500+
$6.2177
2000+
$6.1536
2500+
$6.0895
Exquisite packaging
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The NTBGS1D5N06C by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V
- Vgs(th) (Max) @ Id: 4V @ 318µA
- Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 211W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)