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NTBS2D7N06M7

onsemi
NTBS2D7N06M7 Preview
onsemi
POWER MOSFET, N-CHANNEL, STANDAR
$4.00
Available to order
Reference Price (USD)
800+
$2.41313
1,600+
$2.25225
2,400+
$2.13964
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK-3 (TO-263-3)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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