NTD110N02RT4G
onsemi
onsemi
MOSFET N-CH 24V 12.5A/110A DPAK
$0.70
Available to order
Reference Price (USD)
2,500+
$0.70758
5,000+
$0.67416
12,500+
$0.65028
Exquisite packaging
Discount
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Enhance your electronic projects with the NTD110N02RT4G single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTD110N02RT4G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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