NTE2383
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET P-CH 100V 10.5A TO220
$9.35
Available to order
Reference Price (USD)
1+
$9.35000
500+
$9.2565
1000+
$9.163
1500+
$9.0695
2000+
$8.976
2500+
$8.8825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2383 single MOSFET from NTE Electronics, Inc is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the NTE2383 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
FQPF5N50CYDTU
Infineon Technologies
IPL65R1K5C6SE8211ATMA1
onsemi
FCPF125N65S3
IXYS
IXFH24N60X
onsemi
FQT13N06TF
STMicroelectronics
STL8N6F7
Infineon Technologies
IPB100N04S2L-03ATMA2
Infineon Technologies
IRFP140NPBF
Vishay Siliconix
SI8851EDB-T2-E1
Vishay Siliconix