SI8851EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V PWR MICRO FOOT
$0.65
Available to order
Reference Price (USD)
3,000+
$0.26781
6,000+
$0.25043
15,000+
$0.24174
30,000+
$0.23700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SI8851EDB-T2-E1 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SI8851EDB-T2-E1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power Micro Foot® (2.4x2)
- Package / Case: 30-XFBGA
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