NTE2639
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 825V 12A SOT399
$13.98
Available to order
Reference Price (USD)
1+
$13.98000
500+
$13.8402
1000+
$13.7004
1500+
$13.5606
2000+
$13.4208
2500+
$13.281
Exquisite packaging
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Enhance your circuit designs with the NTE2639 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE2639 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 825 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1.75A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 7A, 1V
- Power - Max: 45 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TOP-3D, TOP-3E
- Supplier Device Package: SOT-399
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