NTE307
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 40V 1.5A TO202
$3.90
Available to order
Reference Price (USD)
1+
$3.90000
500+
$3.861
1000+
$3.822
1500+
$3.783
2000+
$3.744
2500+
$3.705
Exquisite packaging
Discount
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Discover the NTE307 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE307 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 500mA, 4V
- Power - Max: 7 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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