NTH4L060N065SC1
onsemi
onsemi
SIC MOS TO247-4L 650V
$15.96
Available to order
Reference Price (USD)
1+
$15.96000
500+
$15.8004
1000+
$15.6408
1500+
$15.4812
2000+
$15.3216
2500+
$15.162
Exquisite packaging
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Enhance your electronic projects with the NTH4L060N065SC1 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTH4L060N065SC1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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