NTH4LN040N65S3H
onsemi
onsemi
NTH4LN040N65S3H
$11.10
Available to order
Reference Price (USD)
1+
$11.10000
500+
$10.989
1000+
$10.878
1500+
$10.767
2000+
$10.656
2500+
$10.545
Exquisite packaging
Discount
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Enhance your electronic projects with the NTH4LN040N65S3H single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTH4LN040N65S3H for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id: 4V @ 6.8mA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6513 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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