NTMFS6H852NLT1G
onsemi
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
$0.43
Available to order
Reference Price (USD)
1+
$0.43049
500+
$0.4261851
1000+
$0.4218802
1500+
$0.4175753
2000+
$0.4132704
2500+
$0.4089655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the NTMFS6H852NLT1G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTMFS6H852NLT1G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
IXYS
IXTH36P15P
Renesas Electronics America Inc
RJK60S5DPN-00#T2
Vishay Siliconix
SIR514DP-T1-RE3
NXP USA Inc.
PMPB12UN,115
Toshiba Semiconductor and Storage
TK35S04K3L(T6L1,NQ
Renesas Electronics America Inc
RJK03B9DPA-00#J5A
Fairchild Semiconductor
FQA7N80C
Vishay Siliconix
SI2302CDS-T1-E3
STMicroelectronics
STD12N60DM2AG
Infineon Technologies