TK35S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 35A DPAK
$0.57
Available to order
Reference Price (USD)
2,000+
$0.51800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK35S04K3L(T6L1,NQ from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's TK35S04K3L(T6L1,NQ for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Renesas Electronics America Inc
RJK03B9DPA-00#J5A
Fairchild Semiconductor
FQA7N80C
Vishay Siliconix
SI2302CDS-T1-E3
STMicroelectronics
STD12N60DM2AG
Infineon Technologies
IPB04N03LAT
Vishay Siliconix
SIHP10N40D-GE3
Vishay Siliconix
IRFI9620GPBF
onsemi
FQT4N20LTF
Rohm Semiconductor
RSR025N03HZGTL
NXP USA Inc.